CQY80N(g) vishay semiconductors rev. a3, 11jan99 1 (10) optocoupler with phototransistor output description the CQY80N(g) series consist of a phototransistor optically coupled to a gallium arsenide infrared- emitting diode in a 6-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique , providing a fixed distance between input and output for highest safety requirements. applications circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced isolation): for appl. class i iv at mains voltage 300 v for appl. class i iii at mains voltage 600 v according to vde 0884, table 2, suitable for: switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. vde standards these couplers perform safety functions according to the following equipment standards: vde 0884 optocoupler for electrical safety requirements iec 950/en 60950 office machines (applied for reinforced isolation for mains voltage 400 v rms ) vde 0804 telecommunication apparatus and data processing iec 65 safety for mains-operated electronic and related household apparatus 14827 65 4 2 3 1 c e a (+) c () n.c. 95 10805 b order instruction ordering code ctr ranking remarks CQY80N > 50% CQY80Ng 1) > 50% 1) g = leadform 10.16 mm; g is not marked on the body
CQY80N(g) vishay semiconductors rev. a3, 11jan99 2 (10) features approvals: bsi : bs en 41003, bs en 60095 (bs 415), bs en 60950 (bs 7002), certificate number 7081 and 7402 fimko (seti): en 60950, certificate number 12399 u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 vde 0884, certificate number 94778 vde 0884 related features: rated impulse voltage (transient overvoltage) v iotm = 6 kv peak isolation test voltage (partial discharge test voltage) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resistance according to vde 0303/iec 112 c omparative t racking i ndex: cti = 275 thickness through insulation . 0.75 mm general features: isolation materials according to ul94-vo pollution degree 2 (din/vde 0110 / resp. iec 664) climatic classification 55/100/21 (iec 68 part 1) special construction: therefore, extra low coupling capacity of typical 0.3 pf, high c ommon m ode r ejection low temperature coefficient of ctr ctr > 50% coupling system a absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 60 ma forward surge current t p 3 10 s i fsm 1.5 power dissipation t amb 3 25 c p v 100 mw junction temperature t j 125 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 32 v emitter collector voltage v eco 7 v collector current i c 50 ma collector peak current t p /t = 0.5, t p 3 10 ms i cm 100 ma power dissipation t amb 3 25 c p v 150 mw junction temperature t j 125 c coupler parameter test conditions symbol value unit isolation test voltage (rms) t = 1 min v io 3.75 kv total power dissipation t amb 3 25 c p tot 250 mw ambient temperature range t amb 55 to +100 c storage temperature range t stg 55 to +125 c soldering temperature 2 mm from case, t 3 10 s t sd 260 c
CQY80N(g) vishay semiconductors rev. a3, 11jan99 3 (10) electrical characteristics (t amb = 25 5 c) input (emitter) parameter test conditions symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 a v eco 7 v collector emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 10 200 na coupler parameter test conditions symbol min. typ. max. unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 10 ma CQY80N, CQY80Ng ctr 0.5 0.9
CQY80N(g) vishay semiconductors rev. a3, 11jan99 4 (10) maximum safety ratings (according to vde 0884) see figure 1 this device is used for protective separation against electrical shock only within the maximum safety ratings. this must be ensured by using protective circuits in the applications. input (emitter) parameters test conditions symbol value unit forward current i si 130 ma output (detector) parameters test conditions symbol value unit power dissipation t amb 3 25 c p si 265 mw coupler parameters test conditions symbol value unit rated impulse voltage v iotm 6 kv safety temperature t si 150 c insulation rated parameters (according to vde 0884) parameter test conditions symbol min. typ. max. unit partial discharge test voltage routine test 100%, t test = 1 s v pd 1.6 kv partial discharge test t tr = 60 s, t test = 10 s, v iotm 6 kv g voltage lot test (sample test) tr test (see figure 2) v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 0 25 50 75 100 125 150 175 200 225 250 275 0 25 50 75 100 125 150 175 p total power dissipation ( mw ) t amb ambient temperature ( 5 c ) 95 10923 tot p si (mw) i si (ma) figure 1. derating diagram v iotm v pd v iowm v iorm v t 4 t 3 t test t stres t 2 t 1 t 0 13930 t tr = 60 s t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s figure 2. test pulse diagram for sample test according to din vde 0884
CQY80N(g) vishay semiconductors rev. a3, 11jan99 5 (10) switching characteristics parameter test conditions symbol typ. unit delay time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t d 4.0 s rise time s c l (g) t r 7.0 s fall time t f 6.7 s storage time t s 0.3 s turn-on time t on 11.0 s turn-off time t off 7.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t on 25.0 s turn-off time s f l (g) t off 42.5 s channel i channel ii 100 50 + 5 v oscilloscope r l 1 m c l 20 pf i c = 5 ma ; adjusted through input amplitude i f i f r g = 50 t p t p = 50 s t = 0.01 0 14943 figure 3. test circuit, non-saturated operation channel i channel ii 1 k 50 + 5 v oscilloscope r l 1 m c l 20 pf i c i f i f r g = 50 t p t p = 50 s t = 0.01 0 14944 figure 4. test circuit, saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 5. switching times
CQY80N(g) vishay semiconductors rev. a3, 11jan99 6 (10) typical characteristics (t amb = 25 c, unless otherwise specified) 0 50 100 150 200 250 300 0 40 80 120 p total power dissipation ( mw ) t amb ambient temperature ( ? ? ?M ??? ??? ????? ?????? ?????????????? ??????? ????? M ????? ???? ?????????? ?? ?????? ????????? ? ?? ?? ?? ?? ? ? ?M ? ?? ?? ?? ??M ?? ?? ? ? ??????? ??????? ? ? ? ?M ???M? ? ? ??????? ?????? ? ? ? ????? ? ??????? ?????? ?? ??????? ??????? ? ?M ? ? ? ?? ?? ?? ?? ?? ?? ? ? ? ? ? ? ? ? M ? ? ? ?? ?????? ????????? ? ? ? ?M ??? ?? ??????? ?????? ???????? ???? ??? ? ?? ? ? ? ?? ????? ? ??????? ?????? ???????? ???? ?? ?????? ????????? ??? ? ? ? ? ? ? ????????? ???? ?????? ?? ? ?? ?????? ????????? ? ? ? ? ? ???M ???? ??? ???? ? ?? ? ? ?? ?? ? ? ????? ? ????????? ???? ?????? ?? ?????? ????????? ?? ?? ?? ? ? ? ????????? ???? ?????? ? ? ? ?? ? ? ??????? ?????? ? ? ? ? ? ??? ? ? ? ????? ? ????????? ???? ?????? ?? ??????? ?????? ? ? ? ?? ? ? ? ? ????????? ?????? ? ? ? ? ? ? ??????? ?????? ? ? ? ? ? ?? ? ? ?? ? ????? ?? ????????? ?????? ?? ??????? ??????
CQY80N(g) vishay semiconductors rev. a3, 11jan99 7 (10) 0.1 1 10 0.1 1 10 100 v ce collector emitter voltage ( v ) 100 95 11054 i collector current ( ma ) c 5ma 2ma 1ma i f =50ma 20ma 10ma figure 12. collector current vs. collector emitter voltage 110 0 0.2 0.4 0.6 0.8 1.0 v collector emitter saturation voltage ( v ) cesat i c collector current ( ma ) 100 95 11055 ctr=50% 20% 10% figure 13. collector emitter saturation voltage vs. collector current 0.01 0.1 1 10 0 200 400 600 800 1000 h dc current gain fe i c collector current ( ma ) 100 95 11056 v ce =5v figure 14. dc current gain vs. collector current 0.1 1 10 1 10 100 1000 ctr current transfer ratio ( % ) i f forward current ( ma ) 100 95 11057 v ce =5v figure 15. current transfer ratio vs. forward current 0 5 10 15 0 10 20 30 40 50 i f forward current ( ma ) 20 95 11017 t / t turn on / turn off time ( s ) off on saturated operation v s =5v r l =1k t off t on figure 16. turn on / off time vs. forward current 02 4 6 i c collector current ( ma ) 10 95 11016 t / t turn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 t off t on 0 5 10 15 20 8 figure 17. turn on / off time vs. collector current
CQY80N(g) vishay semiconductors rev. a3, 11jan99 8 (10) xxxxxx 0884 918 a tk 63 15090 type date code (ym) coupling system indicator company logo production location safety logo v de figure 18. marking example dimensions of cny80ng in mm 14771 weight: ca. 0.50 g creepage distance: 8 mm air path: 8 mm after mounting on pc board
CQY80N(g) vishay semiconductors rev. a3, 11jan99 9 (10) dimensions of cny80n in mm 14770 weight: 0.50 g creepage distance: 6 mm air path: 6 mm after mounting on pc board
CQY80N(g) vishay semiconductors rev. a3, 11jan99 10 (10) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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